This behavior attributes to the dominant LA phonons whichĪre fast but also have high frequency and consequently make the temperature get Material MoSi$_2$N$_4$ attains the maximum temperature of only 10 K less thanīP peak temperature. High velocity and relatively low-frequency, shows adequate thermal condition,Īnd its peak temperature is very low, say 110 K, less than that of BP.
The material WSi$_2$N$_4$ with much more phonons in TA mode, with almost The phonon exploration shows that the competition between the dominant heatĬarrier velocity, and its related frequency settles the maximum temperature Present lower maximum temperature than the previously suggested candidate, theīlue phosphorene (BP) which itself reaches a shallow temperature. Our calculations confirm that MoSi$_2$N$_4$ and WSi$_2$N$_4$ Particular, the phonon analysis has been carried out to investigate the peak Investigated using Monte Carlo simulation of the phonon Boltzmann equation. This work, the FETs, including MoSi$_2$N$_4$ and WSi$_2$N$_4$ channels, are Usefulness of the newly proposed channels for thermal management solution. On the other hand, the reliability of transistors, which is determinedīy the maximum temperature they obtain during the performance, specifies the WSi$_2$N$_4$ due to their very desirable electrical and thermal properties are Specifically, two materials of MoSi$_2$N$_4$ and Suggested as suitable replacements for silicon channels in field-effect Download a PDF of the paper titled An investigation into the reliability of newly proposed MoSi$_2$N$_4$/WSi$_2$N$_4$ field-effect transistors: A monte carlo study, by Zahra Shomali Download PDF Abstract: Recently, the two dimensional complex MA$_2$Z$_4$ structures have been
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